Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Cheng Wei Liu, Jin Ji Dai, Ssu Kuan Wu, Nhu Quynh Diep, Sa Hoang Huynh, Thi Thu Mai, Hua Chiang Wen, Chi Tsu Yuan, Wu Ching Chou*, Ji Lin Shen, Huy Hoang Luc

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane E2g2 vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies.

Original languageEnglish
Article number12972
JournalScientific reports
Volume10
Issue number1
DOIs
StatePublished - 1 Dec 2020

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