Subsonic solutions of hydrodynamic model for semiconductors

Li-Ming Yeh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

This paper is concerned with the existence and uniqueness of the steady-state solution of hydrodynamic model for semiconductor devices. Boundary conditions are prescribed by vorticity on inflow boundary as well as by electron density, temperature, and normal component of electron velocity on whole boundary. If the ambient temperature is large, and if both vorticity on inflow boundary and the variation of density on boundary are small, a unique subsonic solution exists.

Original languageEnglish
Pages (from-to)1389-1410
Number of pages22
JournalMathematical Methods in the Applied Sciences
Volume20
Issue number16
DOIs
StatePublished - 10 Nov 1997

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