SUBMICRON TUNGSTEN GATE MOSFET WITH 10 NM GATE OXIDE.

B. Davari*, C. Y. Ting, K. Y. Ahn, S. Basavaiah, Chen-Ming Hu, Y. Taur, M. R. Wordeman, O. Aboelfotoh, L. Krusin-Elbaum, R. V. Joshi, M. R. Polcari

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Processing and characteristics are reported for the first time for submicrometer MOSFETs fabricated with tungsten gate on 10-nm gate oxide and self-aligned TiSi//2 on source-drain regions. It is demonstrated that tungsten gate is stable on such a thin oxide, and a 35% higher inversion-layer electron mobility (compared with n** plus poly gate) is obtained due to a factor-of-three reduction in the transverse field at the interface. Key technology issues have been investigated.

Original languageEnglish
Pages (from-to)61-62
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1987

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