Processing and characteristics are reported for the first time for submicrometer MOSFETs fabricated with tungsten gate on 10-nm gate oxide and self-aligned TiSi//2 on source-drain regions. It is demonstrated that tungsten gate is stable on such a thin oxide, and a 35% higher inversion-layer electron mobility (compared with n** plus poly gate) is obtained due to a factor-of-three reduction in the transverse field at the interface. Key technology issues have been investigated.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1987|