Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth

Jayshri Sabarinathan*, Pallab Bhattacharya, Donghai Zhu, Boaz Kochman, Weidong Zhou, Peichen Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 μm. Transmission measurements reveal a stopband centered at 1.0 μm with a maximum attenuation of 10 dB for the submicron (a = 0.5 μm) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths.

Original languageEnglish
Pages (from-to)3024-3026
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number20
DOIs
StatePublished - 14 May 2001

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