Submicron T-Shaped Gate HEMT Fabrication using Deep-UV Lithography

Edward Yi Chang, E. H. Liu, C. Y. Chang, K. C. Lin, T. H. Chen, John Chen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to fabricate submicron T-shaped gate. Gate length as narrow as 0.2 µm is achieved. The GaAs HEMT's with 0.3 µm T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.

Original languageEnglish
Article number296215
Pages (from-to)277-279
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - Aug 1994

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