Submicron Cu/Sn bonding technology with transient Ni diffusion buffer layer for 3DIC application

Yao Jen Chang*, Yu Sheng Hsieh, Kuan-Neng Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

A submicron Cu/Sn bonding with transient Ni buffer layer at 225 °C is demonstrated to overcome current 5- μ m Cu/Sn physical limitation. The 10-nm Ni layer suppresses immense Cu/Sn interdiffusion during heating step prior to major bonding process. When the temperature is close to the Sn melting point, the Ni layer dissolves and molten Sn gives successful submicrometer Cu/Sn bonding. The excellent mechanical strength and electrical performance of this scheme show the great potential for future and highly dense 3D interconnects.

Original languageEnglish
Article number6912994
Pages (from-to)1118-1120
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number11
DOIs
StatePublished - 1 Nov 2014

Keywords

  • 3D integration
  • Cu/Sn bonding
  • transient Ni buffer layer

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