Submicrometer p-Type SnO Thin-Film Transistors Fabricated by Film Profile Engineering Method

Ming Hung Wu, Horng-Chih Lin*, Pei-Wen Li

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We reported the fabrication of submicrometer p-type tin monoxide (SnO) thin-film transistors (TFTs) with a channel length of 0.2μm for back-end-of-line applications using a film profile engineering (FPE) approach. Material analyses indicate that the as-deposited SnO films are amorphous, while be transformed to polycrystalline after a thermal annealing in oxygen ambient. Fabricated p-type SnO FPE-TFTs of a channel length of 0.2μm were manifested with ON/OFF current ratio higher than 105 and subthreshold slope of 320 mV/decade, superior to the data of submicrometer SnO devices ever reported. The extracted field-effect mobility is about 0.25 cm2/V·s. After ruling out the influence of source/drain series resistance, the intrinsic field-effect mobility is found to be about 1 cm/V·s.

Original languageEnglish
Article number8643587
Pages (from-to)1766-1771
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number4
DOIs
StatePublished - 1 Apr 2019

Keywords

  • Source/drain series resistance
  • thin-film transistor (TFT)
  • tin monoxide (SnO)

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