SUBBREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET.

J. Chen*, T. Y. Chan, I. C. Chen, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

230 Scopus citations

Abstract

Significant drain leakage current can be detected at drain voltages much lower than the breakdown voltage. This subbreakdown leakage can dominate the drain leakage current at zero V//G in thin-oxide MOSFETs. The mechanism is shown to be band-to-band tunneling in Si in the drain/gate overlap region. In order to limit the leakage current to 0. 1 pA/ mu m, the oxide field in the gate-to-drain overlap region must be limited to 2. 2 MV/cm, which may set another constraint for oxide thickness or power supply voltage.

Original languageEnglish
Pages (from-to)515-517
Number of pages3
JournalElectron device letters
VolumeEDL-8
Issue number11
DOIs
StatePublished - 1 Nov 1987

Fingerprint Dive into the research topics of 'SUBBREAKDOWN DRAIN LEAKAGE CURRENT IN MOSFET.'. Together they form a unique fingerprint.

Cite this