Significant drain leakage current can be detected at drain voltages much lower than the breakdown voltage. This subbreakdown leakage can dominate the drain leakage current at zero V//G in thin-oxide MOSFETs. The mechanism is shown to be band-to-band tunneling in Si in the drain/gate overlap region. In order to limit the leakage current to 0. 1 pA/ mu m, the oxide field in the gate-to-drain overlap region must be limited to 2. 2 MV/cm, which may set another constraint for oxide thickness or power supply voltage.
|Number of pages||3|
|Journal||Electron device letters|
|State||Published - 1 Nov 1987|