Sub-millimeter wave signal generation and detection in CMOS

Kenneth K. O, Mau-Chung Chang, Michael Shur, Wojciech Knap

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

Feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode VCO and a 324-GHz quadruple pushed VCO in 90-nm CMOS, a 410-GHz push-push VCO in 45-nm CMOS, and 180-GHz Schottky diode and 780-GHz plasma wave detectors in 130-nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages185-188
Number of pages4
DOIs
StatePublished - 1 Dec 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 7 Jun 200912 Jun 2009

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Conference

Conference2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period7/06/0912/06/09

Keywords

  • CMOS
  • Detector
  • Mm-wave
  • Oscillator
  • Phase locked loop
  • Schottky diode
  • Sub-millimeter wave
  • Terahertz

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  • Cite this

    O, K. K., Chang, M-C., Shur, M., & Knap, W. (2009). Sub-millimeter wave signal generation and detection in CMOS. In IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest (pp. 185-188). [5165663] (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2009.5165663