Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai Shin Li; Pin Guang Chen; Tung Yan Lai; Chang Hsien Lin; Cheng Chih Cheng; Chun Chi Chen; Yun Jie Wei; Yun Fang Hou; Ming Han Liao; Min Hung Lee; Min Cheng Chen; Jia Min Sheih; Wen Kuan Yeh; Fu Liang Yang; Sayeef Salahuddin; Chen-Ming Hu

doi:10.1109/IEDM.2015.7409760

Sub-60mV-swing negative-capacitance FinFET without hysteresis

Kai Shin Li, Pin Guang Chen, Tung Yan Lai, Chang Hsien Lin, Cheng Chih Cheng, Chun Chi Chen, Yun Jie Wei, Yun Fang Hou, Ming Han Liao, Min Hung Lee, Min Cheng Chen, Jia Min Sheih, Wen Kuan Yeh, Fu Liang Yang, Sayeef Salahuddin, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

156 Scopus citations

Abstract

In this work, we report the first Negative-Capacitance FinFET. ALD Hf ₀₄₂ Zr ₀₅₈ O ₂ is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO ₂ ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	22.6.1-22.6.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409760
State	Published - 16 Feb 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 7 Dec 2015 → 9 Dec 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country	United States
City	Washington
Period	7/12/15 → 9/12/15

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Li, K. S., Chen, P. G., Lai, T. Y., Lin, C. H., Cheng, C. C., Chen, C. C., Wei, Y. J., Hou, Y. F., Liao, M. H., Lee, M. H., Chen, M. C., Sheih, J. M., Yeh, W. K., Yang, F. L., Salahuddin, S., & Hu, C-M. (2015). Sub-60mV-swing negative-capacitance FinFET without hysteresis. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 22.6.1-22.6.4). [7409760] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409760

Li, Kai Shin ; Chen, Pin Guang ; Lai, Tung Yan ; Lin, Chang Hsien ; Cheng, Cheng Chih ; Chen, Chun Chi ; Wei, Yun Jie ; Hou, Yun Fang ; Liao, Ming Han ; Lee, Min Hung ; Chen, Min Cheng ; Sheih, Jia Min ; Yeh, Wen Kuan ; Yang, Fu Liang ; Salahuddin, Sayeef ; Hu, Chen-Ming. / Sub-60mV-swing negative-capacitance FinFET without hysteresis. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 22.6.1-22.6.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{83e251637fd54c49bc202dc0a2e550af,

title = "Sub-60mV-swing negative-capacitance FinFET without hysteresis",

abstract = " In this work, we report the first Negative-Capacitance FinFET. ALD Hf 042 Zr 058 O 2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO 2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work. ",

author = "Li, {Kai Shin} and Chen, {Pin Guang} and Lai, {Tung Yan} and Lin, {Chang Hsien} and Cheng, {Cheng Chih} and Chen, {Chun Chi} and Wei, {Yun Jie} and Hou, {Yun Fang} and Liao, {Ming Han} and Lee, {Min Hung} and Chen, {Min Cheng} and Sheih, {Jia Min} and Yeh, {Wen Kuan} and Yang, {Fu Liang} and Sayeef Salahuddin and Chen-Ming Hu",

year = "2015",

month = feb,

day = "16",

doi = "10.1109/IEDM.2015.7409760",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "22.6.1--22.6.4",

booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

address = "United States",

note = "null ; Conference date: 07-12-2015 Through 09-12-2015",

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Li, KS, Chen, PG, Lai, TY, Lin, CH, Cheng, CC, Chen, CC, Wei, YJ, Hou, YF, Liao, MH, Lee, MH, Chen, MC, Sheih, JM, Yeh, WK, Yang, FL, Salahuddin, S & Hu, C-M 2015, Sub-60mV-swing negative-capacitance FinFET without hysteresis. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409760, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 22.6.1-22.6.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409760

Sub-60mV-swing negative-capacitance FinFET without hysteresis. / Li, Kai Shin; Chen, Pin Guang; Lai, Tung Yan; Lin, Chang Hsien; Cheng, Cheng Chih; Chen, Chun Chi; Wei, Yun Jie; Hou, Yun Fang; Liao, Ming Han; Lee, Min Hung; Chen, Min Cheng; Sheih, Jia Min; Yeh, Wen Kuan; Yang, Fu Liang; Salahuddin, Sayeef; Hu, Chen-Ming.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 22.6.1-22.6.4 7409760 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Sub-60mV-swing negative-capacitance FinFET without hysteresis

AU - Li, Kai Shin

AU - Chen, Pin Guang

AU - Lai, Tung Yan

AU - Lin, Chang Hsien

AU - Cheng, Cheng Chih

AU - Chen, Chun Chi

AU - Wei, Yun Jie

AU - Hou, Yun Fang

AU - Liao, Ming Han

AU - Lee, Min Hung

AU - Chen, Min Cheng

AU - Sheih, Jia Min

AU - Yeh, Wen Kuan

AU - Yang, Fu Liang

AU - Salahuddin, Sayeef

AU - Hu, Chen-Ming

PY - 2015/2/16

Y1 - 2015/2/16

N2 - In this work, we report the first Negative-Capacitance FinFET. ALD Hf 042 Zr 058 O 2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO 2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

AB - In this work, we report the first Negative-Capacitance FinFET. ALD Hf 042 Zr 058 O 2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO 2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work.

UR - http://www.scopus.com/inward/record.url?scp=84964049619&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2015.7409760

DO - 10.1109/IEDM.2015.7409760

M3 - Conference contribution

AN - SCOPUS:84964049619

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 22.6.1-22.6.4

BT - 2015 IEEE International Electron Devices Meeting, IEDM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 7 December 2015 through 9 December 2015

ER -

Li KS, Chen PG, Lai TY, Lin CH, Cheng CC, Chen CC et al. Sub-60mV-swing negative-capacitance FinFET without hysteresis. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 22.6.1-22.6.4. 7409760. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2015.7409760

Sub-60mV-swing negative-capacitance FinFET without hysteresis

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