@inproceedings{83e251637fd54c49bc202dc0a2e550af,
title = "Sub-60mV-swing negative-capacitance FinFET without hysteresis",
abstract = " In this work, we report the first Negative-Capacitance FinFET. ALD Hf 042 Zr 058 O 2 is added on top of the FinFET's gate stack. The test devices have a floating internal gate that can be electrically probed. Direct measurement found the small-signal voltage amplified by 1.6X maximum at the internal gate in agreement with the improvement of the subthreshold swing (from 87 to 55mV/decade). ION increased by >25% for the IOFF. For the first time, we demonstrate that raising HfZrO 2 ferroelectricity, by annealing at higher temperature, reduces and eliminates IV hysteresis and increases the voltage gain. These discoveries will guide future theoretical and experimental work. ",
author = "Li, {Kai Shin} and Chen, {Pin Guang} and Lai, {Tung Yan} and Lin, {Chang Hsien} and Cheng, {Cheng Chih} and Chen, {Chun Chi} and Wei, {Yun Jie} and Hou, {Yun Fang} and Liao, {Ming Han} and Lee, {Min Hung} and Chen, {Min Cheng} and Sheih, {Jia Min} and Yeh, {Wen Kuan} and Yang, {Fu Liang} and Sayeef Salahuddin and Chen-Ming Hu",
year = "2015",
month = feb,
day = "16",
doi = "10.1109/IEDM.2015.7409760",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "22.6.1--22.6.4",
booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",
address = "United States",
note = "null ; Conference date: 07-12-2015 Through 09-12-2015",
}