Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation

Ya Chin King*, Charles Kuo, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


A novel and simple method of growing oxides of multiple thicknesses using oxygen implant in sub-5 nm gate oxide technologies is presented. Results show that multiple thicknesses on the same wafer can be achieved with good interface and bulk properties of the oxide. Oxygen implant produces oxides with better QBD characteristics than the nitrogen-implanted oxides.

Original languageEnglish
Pages (from-to)585-588
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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