A novel and simple method of growing oxides of multiple thicknesses using oxygen implant in sub-5 nm gate oxide technologies is presented. Results show that multiple thicknesses on the same wafer can be achieved with good interface and bulk properties of the oxide. Oxygen implant produces oxides with better QBD characteristics than the nitrogen-implanted oxides.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 6 Dec 1998 → 9 Dec 1998