We introduced a conformal atomic-layer-deposited aluminum oxide layer to cover the imprint mold to reduce the feature size and to strengthen the mold durability. A nano-hole array pattern with diameter down to 85 nm was successfully transferred to sample substrate to fabricate a vertical organic transistor. The Imprint vertical organic transistor exhibited high output current density as 4.35 cm2/V s and high ON/OFF current ratio as 11,000 at a low operation voltage as 1.5 V.
- Atomic layer deposition (ALD)
- Organic transistor
- Vertical channel