SU-8 serial MEMS switch for flexible RF applications

Tzu Yuan Chao*, M. C. Hsu, C. D. Lin, Yu-Ting Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


This paper presents a novel SU-8 micromachining process for MEMS series switch fabrication. The switch is designed with a clamped-clamped SU-8 (5 μm)/Cu (2 μm)/SU-8 (3 μm) beam structure driven by electrostatic force, which is fabricated on a silicon substrate with a resistivity of ∼5 Ω cm. Experimental results show that the switch can exhibit better than -4.48 dB insertion loss and -28.2 dB isolation up to 12 GHz. Such a large insertion loss is mainly caused by substrate loss which can be further reduced down to -0.75 dB as long as the substrate resistivity is increased up to 100 Ω cm.

Original languageEnglish
Article number025010
JournalJournal of Micromechanics and Microengineering
Issue number2
StatePublished - 1 Feb 2011

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