Studying of InSb MOS capacitors for post CMOS application

Edward Yi Chang, Hai Dang Trinh, Yueh Chin Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.

Original languageEnglish
Title of host publicationChip in Curitiba 2013 - SBMicro 2013
Subtitle of host publication28th Symposium on Microelectronics Technology and Devices
PublisherIEEE Computer Society
ISBN (Print)9781479905188
DOIs
StatePublished - 1 Jan 2013
Event28th Symposium on Microelectronics Technology and Devices, SBMicro 2013 - Curitiba, Brazil
Duration: 2 Sep 20136 Sep 2013

Publication series

NameChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices

Conference

Conference28th Symposium on Microelectronics Technology and Devices, SBMicro 2013
CountryBrazil
CityCuritiba
Period2/09/136/09/13

Keywords

  • band alignment
  • CMOS
  • InSb
  • MOSCAPs
  • sub-nanometter

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