Studying of InSb MOS capacitors for post CMOS application

Edward Yi Chang; Hai Dang Trinh; Yueh Chin Lin

doi:10.1109/SBMicro.2013.6676186

Studying of InSb MOS capacitors for post CMOS application

Edward Yi Chang, Hai Dang Trinh, Yueh Chin Lin

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al₂O₃ and HfO₂ are used for studying. The band alignment of Al₂O₃/InSb and HfO₂/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.

Original language	English
Title of host publication	Chip in Curitiba 2013 - SBMicro 2013
Subtitle of host publication	28th Symposium on Microelectronics Technology and Devices
Publisher	IEEE Computer Society
ISBN (Print)	9781479905188
DOIs	https://doi.org/10.1109/SBMicro.2013.6676186
State	Published - 1 Jan 2013
Event	28th Symposium on Microelectronics Technology and Devices, SBMicro 2013 - Curitiba, Brazil Duration: 2 Sep 2013 → 6 Sep 2013

Publication series

Name	Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices

Conference

Conference	28th Symposium on Microelectronics Technology and Devices, SBMicro 2013
Country	Brazil
City	Curitiba
Period	2/09/13 → 6/09/13

Keywords

band alignment
CMOS
InSb
MOSCAPs
sub-nanometter

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Chang, E. Y., Trinh, H. D., & Lin, Y. C. (2013). Studying of InSb MOS capacitors for post CMOS application. In Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices [6676186] (Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices). IEEE Computer Society. https://doi.org/10.1109/SBMicro.2013.6676186

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Chang, EY, Trinh, HD & Lin, YC 2013, Studying of InSb MOS capacitors for post CMOS application. in Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices., 6676186, Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, IEEE Computer Society, 28th Symposium on Microelectronics Technology and Devices, SBMicro 2013, Curitiba, Brazil, 2/09/13. https://doi.org/10.1109/SBMicro.2013.6676186

Studying of InSb MOS capacitors for post CMOS application. / Chang, Edward Yi; Trinh, Hai Dang; Lin, Yueh Chin.

Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices. IEEE Computer Society, 2013. 6676186 (Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.

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