Study trapped charge distribution in p-channel silicon-oxide-nitride-oxide- silicon memory device using dynamic programming scheme

Fu Hai Li*, Yung Yueh Chiu, Yen Hui Lee, Ru Wei Chang, Bo Jun Yang, Wein Town Sun, Eric Lee, Chao Wei Kuo, Riichiro Shirota

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Original languageEnglish
Article number04CD01
JournalJapanese journal of applied physics
Volume52
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2013

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