Study on the interface thermal stability of metal-oxide-semiconductor structures by inelastic electron tunneling spectroscopy

Chih Feng Huang*, Bing-Yue Tsui, Pei Jer Tzeng, Lurng Shehng Lee, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The bias polarity-dependent inelastic electron tunneling spectroscopy is employed to detect the thermal stability of the Ta-Pt/SiO2/Si and Ta-Pt/HfO2/Si structures. This work provides a direct evidence that the Fermi-level pinning of metal gates is counted for the generation of extrinsic states due to interface interaction. A Ta2O5 layer forms at the Ta-Pt/SiO2 interface during thermal annealing whereas only an intermittent Ta-O bond is observed at the Ta-Pt/HfO2 interface. Although the heat of formation of HfO2 is lower than that of SiO2, Si presumably diffuses into HfO2 layer and replaces Hf atoms during the high-temperature annealing.

Original languageEnglish
Article number262909
JournalApplied Physics Letters
Volume88
Issue number26
DOIs
StatePublished - 10 Jul 2006

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