Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride

T. C. Chang*, S. T. Yan, Po-Tsun Liu, C. W. Chen, Y. C. Wu, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) SiNx. shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP) CVD Si 3N4. Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD Si3N4. With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable.

Original languageEnglish
Pages (from-to)G113-G115
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume7
Issue number6
DOIs
StatePublished - 16 Jun 2004

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