Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses

Wei Tsung Chen*, Hsiao-Wen Zan, Shih Yi Lo, Shih Chin Kao, Chuang Chuang Tsai, Jian Hong Lin, Chun Hsiang Fang, Chung Chun Lee

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.

Original languageEnglish
Pages763-765
Number of pages3
StatePublished - 1 Dec 2010
Event17th International Display Workshops, IDW'10 - Fukuoka, Japan
Duration: 1 Dec 20103 Dec 2010

Conference

Conference17th International Display Workshops, IDW'10
CountryJapan
CityFukuoka
Period1/12/103/12/10

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    Chen, W. T., Zan, H-W., Lo, S. Y., Kao, S. C., Tsai, C. C., Lin, J. H., Fang, C. H., & Lee, C. C. (2010). Study on oxygen-dependent instability of amorphous In-Ga-Zn-O TFT and completely stable device under both positive and negative bias stresses. 763-765. Paper presented at 17th International Display Workshops, IDW'10, Fukuoka, Japan.