A complete experiment is conducted to verify the origin of stress-induced instability in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). It is found that the oxygen ratio in an IGZO layer strongly influences the device stability under bias stress. For realizing an adequately stable device, post-annealing and passivation are performed in order.
|Number of pages||3|
|State||Published - 1 Dec 2010|
|Event||17th International Display Workshops, IDW'10 - Fukuoka, Japan|
Duration: 1 Dec 2010 → 3 Dec 2010
|Conference||17th International Display Workshops, IDW'10|
|Period||1/12/10 → 3/12/10|