Study on Optoelectronic Characteristics of ZnGa2O4Thin-Film Phototransistors

Yuan Chu Shen, Chun Yi Tung, Chiung Yi Huang, Yu Chang Lin, Yan Gu Lin, Ray Hua Horng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Deep ultraviolet (DUV) phototransistors with high photoresponsivity are fabricated on ZnGa2O4 grown by metal-organic chemical-vapor deposition. Owing to transistor actions, the photodetector meets to a large photocurrent and optical response. When illuminated with photon wavelength within the range of 200-250 nm, the ZnGa2O4-based phototransistor presented a large responsivity, especially 1.51 × 106 A/W as the incident light at 210 nm with 1.73 μW/cm2. It was also observed that the photocurrent/dark current ratio and rising time can be improved by gate control, which is related to threshold voltage shifting when under illumination. These results demonstrate ZnGa2O4-based phototransistor is a very promising candidate for DUV optoelectronic devices applications.

Original languageEnglish
Pages (from-to)783-788
Number of pages6
JournalACS Applied Electronic Materials
Volume1
Issue number5
DOIs
StatePublished - 28 May 2019

Keywords

  • DUV phototransistors
  • metal-organic chemical-vapor deposition
  • photodetectors
  • phototransistors
  • ZnGaO

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