Study on mechanisms of InGaP/GaAs HBT safe operating area using TCAD simulation

Tao Nick G. M., Bo-Rong Lin, Chien-Ping Lee, Herderson Tim, Barry Jia-Fu Lin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The safe operating area (SOA) of InGaP/GaAs heterojunction bipolar transistors has been studied using two-dimensional Technology Computer-Aided Design (TCAD) tool. Comprehensive physical models, including hydrodynamic transport-based impact ionization and self-heating models were implemented. The simulations for two DC modes (constant I-b and V-b modes) captured all the SOA features observed in measurements and some failure mechanisms were revealed for the first time by TCAD simulations. The simulated results are also in agreement with analytical modeling. The simulation not only gives us insight to the detailed failure mechanisms, but also provides guidance for the design of devices with better ruggedness and improved SOA performances.
Original languageEnglish
Pages (from-to)279-285
Number of pages7
JournalInternational Journal of Microwave and Wireless Technologies
StatePublished - Jun 2015


  • Simulation; HBT; Safe operating area; TCAD

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