Study on hydrogen ion-implanted characteristic of thin-film green resonant-cavity light-emitting diodes

Shih Yung Huang*, Ray-Hua Horng, Po Han Tseng, Jen Hung Tu, Li Wei Tu, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonant-cavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion H+ in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level (∼ 512 nm, 2.4 eV). Superior directionality was also obtained because the selective area of p-GaN layer of RCLEDs with ion implantation provided a low refractive index. The light emission enhancement was due to the high current density increasing and the total reflection of the emission ray. The electroluminescence spectrum exhibited narrow full-width at half-maximum of 45 nm for the RCLEDs with ion implantation. The fiber-coupled power of RCLEDs with H+ implantation was 2.2 times greater than that of a similar structure without H+ implantation at an injection current of 20 mA.

Original languageEnglish
Article number5404952
Pages (from-to)404-406
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number6
DOIs
StatePublished - 15 Mar 2010

Keywords

  • Hydrogention implantation
  • InGaN
  • Resonant-cavity light-emitting diode (RCLED)

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