This letter investigates the effects of hydrogen ion implantation on the characteristics of InGaN-based green resonant-cavity light-emitting diodes (RCLEDs). RCLEDs with ion implantation were fabricated by implanting hydrogen ion H+ in a selective area. The implanted region was used to form current-confinement layers due to an existing deep-level (∼ 512 nm, 2.4 eV). Superior directionality was also obtained because the selective area of p-GaN layer of RCLEDs with ion implantation provided a low refractive index. The light emission enhancement was due to the high current density increasing and the total reflection of the emission ray. The electroluminescence spectrum exhibited narrow full-width at half-maximum of 45 nm for the RCLEDs with ion implantation. The fiber-coupled power of RCLEDs with H+ implantation was 2.2 times greater than that of a similar structure without H+ implantation at an injection current of 20 mA.
- Hydrogention implantation
- Resonant-cavity light-emitting diode (RCLED)