Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga 2O 3 sacrificial layer

Ray-Hua Horng*, D. S. Wuu, S. L. Ou, H. H. Hsueh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

GaN epilayer can be grown on sapphire substrate with a Ga 2O 3 sacrificial layer. It was employed for the epilayer transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201) oriented β-Ga 2O 3 thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth via metalorganic vapor phase epitaxy under N 2 and H 2 environment in sequence. The crystal quality of GaN epilayer can be improved dramatically with the regrowth in a H 2 ambient. A GaN epilayer with an electroplated copper substrate was demonstrated using a chemical lift-off process where the Ga 2O 3 sacrificial layer can be laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication and Green Photonics Development.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVI
DOIs
StatePublished - 5 Mar 2012
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI - San Francisco, CA, United States
Duration: 24 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8278
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVI
CountryUnited States
CitySan Francisco, CA
Period24/01/1226/01/12

Keywords

  • Ga O interlayer
  • GaN
  • decomposition
  • metalorganic chemical vapor deposition

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