Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

Chang Ho Tseng, Ching Wei Lin, Teh Hung Teng, Ting Kuo Chang, Huang-Chung Cheng*, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The KrF excimer laser annealing of phosphorous implanted polycrystalline silicon (poly-Si) films had been investigated completely. Resistors were fabricated to measure sheet resistance of poly-Si film. The interference effect, heat absorption of capping oxide as well as transformation of poly-Si grain size during laser annealing were reported. Depending on the carrier concentrations, poly-Si exhibits different sheet resistance behavior when the excimer laser fluence is higher than the full-melt threshold fluence. The sheet resistance of poly-Si film has an abnormal increase from 5 × 104 to 4 × 106 Ω/□ when the excimer laser energy is higher than full-melt threshold energy.

Original languageEnglish
Pages (from-to)1085-1090
Number of pages6
JournalSolid-State Electronics
Volume46
Issue number8
DOIs
StatePublished - 1 Aug 2002

Keywords

  • Active-matrix liquid crystal display
  • Dopant activation
  • Excimer laser annealing
  • Polycrystalline silicon thin film transistor

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