The KrF excimer laser annealing of phosphorous implanted polycrystalline silicon (poly-Si) films had been investigated completely. Resistors were fabricated to measure sheet resistance of poly-Si film. The interference effect, heat absorption of capping oxide as well as transformation of poly-Si grain size during laser annealing were reported. Depending on the carrier concentrations, poly-Si exhibits different sheet resistance behavior when the excimer laser fluence is higher than the full-melt threshold fluence. The sheet resistance of poly-Si film has an abnormal increase from 5 × 104 to 4 × 106 Ω/□ when the excimer laser energy is higher than full-melt threshold energy.
- Active-matrix liquid crystal display
- Dopant activation
- Excimer laser annealing
- Polycrystalline silicon thin film transistor