Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors

Pei-Wen Li*, David M.T. Kuo, W. M. Liao, W. T. Lai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The transport properties of Ge quantum-dot (QD) single-hole and -electron transistors (SHTs/SETs) are experimentally investigated. The tunneling currents of Ge-SETs and -SHTs could be modulated by adjusting top Si layer thickness on silicon-on-insulator substrates or applying back-gate biases due to parasitic transistors effect. The Coulomb oscillation of tunneling current is stable with respect to temperature, indicating the observed current should go through the energy levels of a Ge QD but not through trap states. The kp method has been employed to calculate the hole energy levels of a spherical Ge QD to clarify the homogeneous oscillation current characteristic of SHTs.

Original languageEnglish
Article number213117
JournalApplied Physics Letters
Volume88
Issue number21
DOIs
StatePublished - 21 May 2006

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