Study of Thyristor-Mode Dual-Channel NAND Flash Devices

Roger Lo, Hang Ting Lue, Wei Chen Chen, Pei Ying Du, Tzu Hsuan Hsu, Tuo-Hung Hou, Keh Chung Wang, Chih Yuan Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel dual-channel 3D NAND device was proposed previously [1]. In addition to the N-and P-channel read operations, such device can also perform a special "thyristor mode" which possesses super steep subthreshold slope (S.S. 0). In this work, we studied 4 different types of read methods with the same device, which are normal N-and P-channel read, and thyristor-mode N-and P-channel read, respectively. These 4 different read methods can be carried out by just simply changing the bias arrangements of wordlines so that the IdVg curves can behave differently. An interesting finding is that the Vt window of P/E cycling and retention are quite different among these sensing methods. It may provide a new methodology to understand the charge storage mechanisms. This work provides a comprehensive study for understanding the operation physics of this novel device.

Original languageEnglish
Title of host publication2018 IEEE 10th International Memory Workshop, IMW 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538652473
DOIs
StatePublished - 19 Jun 2018
Event10th IEEE International Memory Workshop, IMW 2018 - Kyoto, Japan
Duration: 13 May 201816 May 2018

Publication series

Name2018 IEEE 10th International Memory Workshop, IMW 2018

Conference

Conference10th IEEE International Memory Workshop, IMW 2018
CountryJapan
CityKyoto
Period13/05/1816/05/18

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