Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

Y. C. Lin, M. W. Lee, M. Y. Tsai, C. Wang, J. N. Yao, T. J. Huang, Heng-Tung Hsu, J. S. Maa, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.

Original languageEnglish
Title of host publicationEuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages68-71
Number of pages4
ISBN (Electronic)9782874870569
DOIs
StatePublished - Sep 2019
Event14th European Microwave Integrated Circuits Conference, EuMIC 2019 - Paris, France
Duration: 30 Sep 20191 Oct 2019

Publication series

NameEuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference

Conference

Conference14th European Microwave Integrated Circuits Conference, EuMIC 2019
CountryFrance
CityParis
Period30/09/191/10/19

Keywords

  • AlGaN/GaN HEMT
  • copper metallization
  • interconnect metal
  • low noise figure
  • thermal stability

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