Study of thermal stability of nickel monogermanide on single- And polycrystalline germanium substrates

Shih Lu Hsu*, Chao-Hsin Chien, Ming Jui Yang, Rui Hao Huang, Ching Chich Leu, Shih Wen Shen, Tsung Hsi Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

We have investigated the thermal stability of nickel monogermanide (NiGe) films formed by rapid thermal annealing on both single- and polycrystalline Ge substrates. We found that the NiGe phase is the only one present after nickel germanidation in the temperature range 400-700°C. A fairly uniform NiGe film formed on the single-crystalline Ge; it possessed excellent resistivity (15.6 μΩ cm) and was thermally stable up to 550°C, but it degraded rapidly at higher temperatures as a result of agglomeration. In contrast, the NiGe film formed on the polycrystalline Ge exhibited much poorer thermal stability, possibly because of polycrystalline Ge grain growth, which resulted in columnar NiGe grains interlaced with Ge grains that had a dramatically increased sheet resistance. As a result, we observed that the sheet resistances of NiGe lines subjected to annealing at 500°C depended strongly on the linewidth when this width was comparable with the grain size of the polycrystalline Ge.

Original languageEnglish
Article number251906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number25
DOIs
StatePublished - 13 Sep 2005

Fingerprint Dive into the research topics of 'Study of thermal stability of nickel monogermanide on single- And polycrystalline germanium substrates'. Together they form a unique fingerprint.

Cite this