Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

C. H. Chiu, Hao-Chung Kuo, C. E. Lee, C. H. Lin, B. S. Cheng, P. C. Cheng, H. W. Huang, Tien-chang Lu, S. C. Wang, K. M. Leung

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO 2 and SiO 2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO 2 /Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO 2 /SiO 2 ODR within the blue regime.

Original languageEnglish
Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Pages219-224
Number of pages6
Edition5
DOIs
StatePublished - 1 Dec 2007
Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number5
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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