Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Isabella Rossetto*, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

This paper investigates the robustness of normally-off High Electron Mobility Transistors (HEMTs) with p-GaN gate submitted to forward gate bias overstress. By means of combined DC and spectral analysis we demonstrate the following results: (i) the devices demonstrate a time-dependent failure mechanism; (ii) time to failure (TTF) can be described by a Weibull distribution with a shape factor higher than 1, suggesting a wear-out failure; (iii) the devices have an estimated 20-years lifetime for a gate voltage of 7.2 V; (iv) TTF is temperature-dependent, with an activation energy of 0.5 eV; (v) emission microscopy reveals the presence of hot spots, whose emission originates from yellow luminescence and/or hot electron radiation.

Original languageEnglish
Pages (from-to)547-551
Number of pages5
JournalMicroelectronics Reliability
Volume64
DOIs
StatePublished - 1 Sep 2016

Keywords

  • AlGaN/GaN HEMT
  • Emission microscopy
  • Forward gate bias overstress
  • p-GaN gate
  • Reliability
  • Spectral analysis

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    Rossetto, I., Meneghini, M., Rizzato, V., Ruzzarin, M., Favaron, A., Stoffels, S., Van Hove, M., Posthuma, N., Wu, T-L., Marcon, D., Decoutere, S., Meneghesso, G., & Zanoni, E. (2016). Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectronics Reliability, 64, 547-551. https://doi.org/10.1016/j.microrel.2016.07.127