Study of the long-term electrical stability of ingazno 3-d film-profile-engineered inverters

Chin I. Kuan, Horng-Chih Lin, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

IGZO 3-D film-profile-engineered (FPE) inverters were fabricated and characterized. The unipolar load and driver thin-film transistors (TFTs) were stacked vertically not only for the sake of saving footprint, but also for the flexibility of threshold voltage adjustment by the lengths of suspended hardmask. The proposed 3-D inverters demonstrate full-swing switching with a voltage gain as high as 13.6 V/V at an operating voltage of 5 V. The long-term stability was investigated in terms of the voltage gain, transconductance (gm) and threshold voltage (Vth) shift. Following 4 months, degradation in the voltage gain of the inverter in company of reduced gm and positive Vth shift for the drive TFT is attributed to the outgassing of hydrogen.

Original languageEnglish
Title of host publicationIPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538649299
DOIs
StatePublished - 30 Aug 2018
Event25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
Duration: 16 Jul 201819 Jul 2018

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2018-July

Conference

Conference25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
CountrySingapore
CitySingapore
Period16/07/1819/07/18

Keywords

  • film-profile-engineered
  • IGZO
  • inverters
  • long-term stability
  • Thin film transistors
  • transconductance
  • voltage gain

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