Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents

Yun Chi Wu, Edward Yi Chang*, Yueh Chin Lin, Chi Chung Kei, Mantu K. Hudait, Marko Radosavljevic, Yuen Yee Wong, Chia Ta Chang, Jui Chien Huang, Shih Hsuan Tang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


InxGa1-xAs III-V compound semiconductor metal-oxide-semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the InxGa1-xAs materials. The impact of In content on the accumulation and inversion behaviors of the Al2O3/InxGa1-xAs capacitors is investigated in this study. For the various InxGa1-xAs materials studied, the Al2O3/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other InxGa1-xAs materials. Also, very low gate leakage current in the 10-8 A/cm2 range was observed for these capacitors. These results demonstrate that Al2O3/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications.

Original languageEnglish
Pages (from-to)37-41
Number of pages5
JournalSolid-State Electronics
Issue number1
StatePublished - 1 Jan 2010


  • AlO
  • ALD
  • Capacitor
  • InAs
  • InGaAs
  • MOS

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