Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

Original languageEnglish
Article number085208
JournalAIP Advances
Volume7
Issue number8
DOIs
StatePublished - 1 Aug 2017

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    Do, H. B., Luc, Q. H., Ha, M. T. H., Huynh, S. H., Nguyen, T. A., Lin, Y. C., & Chang, E. Y. (2017). Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices. AIP Advances, 7(8), [085208]. https://doi.org/10.1063/1.4986147