Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Yueh Chin Lin; Edward Yi Chang

doi:10.1063/1.4986147

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO₂/AlN/InGaAs MOS devices

Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Tuan Anh Nguyen, Yueh Chin Lin, Edward Yi Chang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The degeneration of the metal/HfO₂ interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdO_x interfacial layer formed at the Pd/HfO₂ interface, inducing the oxygen segregation for the Pd/HfO₂/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdO_x layer contains O^2- and OH^- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO₂/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

Original language	English
Article number	085208
Journal	AIP Advances
Volume	7
Issue number	8
DOIs	https://doi.org/10.1063/1.4986147
State	Published - 1 Aug 2017

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title = "Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices",

abstract = "The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.",

author = "Do, {Huy Binh} and Luc, {Quang Ho} and Ha, {Minh Thien Huu} and Huynh, {Sa Hoang} and Nguyen, {Tuan Anh} and Lin, {Yueh Chin} and Chang, {Edward Yi}",

year = "2017",

month = aug,

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doi = "10.1063/1.4986147",

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T1 - Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

AU - Do, Huy Binh

AU - Luc, Quang Ho

AU - Ha, Minh Thien Huu

AU - Huynh, Sa Hoang

AU - Nguyen, Tuan Anh

AU - Lin, Yueh Chin

AU - Chang, Edward Yi

PY - 2017/8/1

Y1 - 2017/8/1

N2 - The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

AB - The degeneration of the metal/HfO2 interfaces for Mo, Ni, and Pd gate metals was studied in this paper. An unstable PdOx interfacial layer formed at the Pd/HfO2 interface, inducing the oxygen segregation for the Pd/HfO2/InGaAs metal oxide capacitor (MOSCAP). The low dissociation energy for the Pd-O bond was the reason for oxygen segregation. The PdOx layer contains O2- and OH- ions which are mobile during thermal annealing and electrical stress test. The phenomenon was not observed for the (Mo, Ni)/HfO2/InGaAs MOSCAPs. The results provide the guidance for choosing the proper metal electrode for the InGaAs based MOSFET.

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U2 - 10.1063/1.4986147

DO - 10.1063/1.4986147

M3 - Article

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VL - 7

JO - AIP Advances

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SN - 2158-3226

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ER -

Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices

Abstract

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Study of the interface stability of the metal (Mo, Ni, Pd)/HfO₂/AlN/InGaAs MOS devices