Study of the formation mechanism of Cu/Ge/Pd ohmic contact to n-type InGaAs

Y. C. Lin, Sheng Li Shie, Tin En Shie, Yuen Yee Wong, K. S. Chen, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

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This study investigates electrical characteristics and the formation mechanism of the Cu/Ge/Pd Ohmic contact to n-type InGaAs. After annealing the contact at 250°C for 20 min, Cu 3Ge and Pd 12Ga 5As 2 compounds formed and Ge diffused into the InGaAs layer, achieving a heavily doped InGaAs layer with a low contact resistivity of 1 × 10 -6 Ω cm 2. Thermal stability tests were performed on the Cu/Ge/Pd Ohmic contact to InGaAs after Ohmic contact formation, showing no obvious degradation after a 72 h reliability test at 250°C. The results indicate excellent electrical characteristics and thermal stability using Cu/Ge/Pd as an Ohmic contact metal to an n-InGaAs layer.

Original languageEnglish
Pages (from-to)289-294
Number of pages6
JournalJournal of Electronic Materials
Issue number3
StatePublished - 1 Mar 2011


  • Copper metalization
  • Cu/Ge/Pd Ohmic contact
  • InGaAs

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