Study of surface plasmons at the metal/semiconductor interface

Ray-Hua Horng*, Shih Hao Chuang, Cheng Sheng Tsung, Ching Ho Chen, Cheng Yi Lin, Feng Yeh Chang, Dong Sing Wuu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

GaN-based light-emitting diode (LED) was successfully fabricated using surface plasmons (SPs) excited at the metal/semiconductor interface. Normally, SPs excited by the interaction between light and metal surfaces were known to enhance the internal quantum efficiency of LEDs via the quantum-wells (QWs) and SPs coupling. The penetration depth of SPs fringing field for the Ag film was calculated as 42.0 nm at an emission wavelength of 460 nm. Thus, the distance between the QWs and metal was critical for QWs-SP coupling. However, the p-GaN layer in blue emissive GaN-based LEDs, which is a sandwich layer between the active and p-type conducting layers, must has a thickness of over 120 nm to ensure the sufficient mobility of carriers. In this study, an Ag nanoparticle layer was coated on p-GaN top layer as the grating structure. The light extraction efficiency of lateral conducting blue LED is expected to be enhanced by the surface plasmon-TM light mode coupling during the localized surface plasmon resonance. Compared to the optoelectronic performance of the conventional LED, the SP-enhanced LED shows the superior performance, even though the silver nanoparticles were placed at least 200 nm away from the quantum-well active layer. The output power of the SP-enhanced LED exhibited over 1.1 times in magnitude as compared with that of the conventional LED at 350 mA, while still keeping nearly the same current-voltage characteristic.

Original languageEnglish
Title of host publicationNanophotonics V
PublisherSPIE
ISBN (Print)9781628410747
DOIs
StatePublished - 1 Jan 2014
EventNanophotonics V - Brussels, Belgium
Duration: 13 Apr 201417 Apr 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9126
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNanophotonics V
CountryBelgium
CityBrussels
Period13/04/1417/04/14

Keywords

  • Electroluminescence spectrum
  • External quantum efficiency (EQE)
  • Internal quantum efficiency (IQE)
  • Light extraction efficiency (LEE)
  • Light-emitting diode (LED)
  • Metalorganic chemical vapor deposition (MOCVD)
  • Nanoparticle
  • Surface plasmon

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