Study of SrTiO3 gate dielectrics

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Among various possible candidates of high-k gate dielectrics, SrTiO 3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO 3 gate dielectrics are reported. The effect of the addition of SiO 2 on the microstructure and electrical properties of SiTiO 3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO 3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Original languageEnglish
Title of host publicationFerroelectrics and Multiferroics
Number of pages10
StatePublished - 1 Dec 2006
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 27 Nov 20061 Dec 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA

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