Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1998|
|Event||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 9 Jun 1998 → 11 Jun 1998