The Schottky barrier height of metals (Pt, Pd, Au, Ni, and Ti) on n-GaN has been measured by C-V and J-T methods. Comparison of the Schottky characteristics of those metals are discussed. Ni on GaN dose not follow the rule of S=1 for GaN. The metal work function of Ni is high but the Schottky barrier height is low. The metal work function of Ag is about 4.26 eV, but the Schottky barrier height is about 1.2 eV. We think that it is because of the interactions between the metal and the semiconductor dominate the Schottky behavior.
|Number of pages||3|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China|
Duration: 24 Oct 1995 → 28 Oct 1995
|Conference||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology|
|Period||24/10/95 → 28/10/95|