Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor deposition

J. D. Guo*, M. S. Feng, R. J. Guo, Fu-Ming Pan, C. Y. Chang

*Corresponding author for this work

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Abstract

Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited by electron-gun evaporation to form Schottky contacts in a vacuum below 1×10-6 Torr. The Schottky barrier heights of Pt on the n-GaN film are determined to be 1.04 and 1.03 eV by current-voltage (C-V) and current density-temperature (J-T) measurements, respectively. Also based on C-V and J-T measurements, the measured barrier height of Pd on n-GaN is 0.94 and 0.91 eV, respectively. Schottky characteristics of Pt and Pd observed in the experiment are compared with those of Au and Ti in previous reports.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1 Jan 1995

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