Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors

Chun Jung Tang*, Ta-Hui Wang, Chih Sheng Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Quantum confinement effects on hole mobility in silicon and germanium double gate p -channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the hole mobility in a (100)/[110] silicon well decreases with a decreasing well thickness, which is in agreement with the experimental result. The hole mobility in a germanium channel MOSFET, however, exhibits a peak in a sub-20 nm well because of the interplay between intrasubband and intersubband scatterings.

Original languageEnglish
Article number142103
JournalApplied Physics Letters
Volume95
Issue number14
DOIs
StatePublished - 19 Oct 2009

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