Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers

Ray-Hua Horng, Parvaneh Ravadgar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Single crystal β-Ga2O3 epitaxial layers have been prepared on c-axis (0001) sapphire substrates using metalorganic chemical vapor deposition technique at relatively low temperature. Post-annealing of β-Ga2O3 single crystals up to 800 °C does not affect the crystallinity, explored by x-ray diffraction, showing that β-Ga2O3 epitaxial layers are highly (-201) oriented. Metal-semiconductor-metal devices are fabricated on single crystals to study their photoresponsivity. A significant improvement in performance of post annealed-based devices is observed, attributed to point defect reduction. Annealing of as-grown samples results to a significant decrease in both oxygen and gallium vacancies, which are sources of current leakage.

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
DOIs
StatePublished - 30 May 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: 3 Feb 20136 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8626
ISSN (Print)0277-786X

Conference

ConferenceOxide-Based Materials and Devices IV
CountryUnited States
CitySan Francisco, CA
Period3/02/136/02/13

Keywords

  • Annealing
  • Photoresponsivity
  • Single crystal
  • β-GaO

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