Study of nonpolar GaN/ZnO heterostructures grown by molecular beam epitaxy

Chiao Yun Chang, Huei Min Huang, Yu-Pin Lan, Tien-chang Lu*, Li Wei Tu, Wen Feng Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The growth mechanism and characteristics of the nonpolar GaN/ZnO heterostructure grown on the r-plane sapphire substrate by using molecular beam epitaxy were studied. The crystal interaction between GaN and ZnO epitaxial layers was clarified by using transmission electron microscopy and X-ray diffraction. A new epitaxial relationship of ZnGa 2 O 4 (220)//GaN (101Ì...3Ì...) in the normal surface direction was obtained in the GaN/ZnO heterostructure. It was believed that the formation of ZnGa 2 O 4 (220) was due to the recrystallization of the ZnO layer with Ga atoms, which in turn resulted in the formation of semipolar-oriented GaN. In addition, the main optical transition in the GaN/ZnO heterostructure was attributed to the existence of the interface states and new ZnO:(Ga,N) alloys.

Original languageEnglish
Pages (from-to)3098-3102
Number of pages5
JournalCrystal Growth and Design
Issue number7
StatePublished - 3 Jul 2013

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