Study of nickel silicide contact on Si/Si1-xGex

Tsung Hsi Yang, Guangli Luo, Edward Yi Chang, Tsung Yeh Yang, Hua Chou Tseng*, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalLetter

21 Scopus citations

Abstract

The properties of nickel silicide formed by depositing nickel on Si/P+ - Si1-xGex layer are compared with that of nickel germanosilicide on P+ - Si1-xGex layer formed by depositing Ni directly on P+ - Si1-xGex layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/P+ - Si1-xGex layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P+ - Si1-xGex layer. In addition, small junction leakage current is also observed for nickel silicide on Si/P+ - Si1-xGex/N - Si diode. In summary, with a Si consuming layer on top of the Si1-xGex, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si1-xGex layer.

Original languageEnglish
Pages (from-to)544-546
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
StatePublished - 1 Sep 2003

Keywords

  • Agglomerate
  • Ni
  • SiGe
  • Silicide

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    Yang, T. H., Luo, G., Chang, E. Y., Yang, T. Y., Tseng, H. C., & Chang, C. Y. (2003). Study of nickel silicide contact on Si/Si1-xGex. IEEE Electron Device Letters, 24(9), 544-546. https://doi.org/10.1109/LED.2003.815944