Tin oxide (SnO2) thin films were deposited on polycrystalline alumina (Al2O3) substrates using metal organic chemical vapor deposition (MOCVD) technique at the growth temperature of 600 °C. X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were applied for the microstructure characterization of the films. The films were subjected to sensing tests under 1% H2 environment by monitoring changes in the electrical resistance of the films at elevated temperatures. There is a trend to exhibit sensor temperature characteristic in the deposited thin films which show a local maximum in the electrical resistance curve as a function of ambient temperature. The local maximum occurred at a relatively higher temperature than found in bulk sintered ceramics.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA|
Duration: 26 Nov 1995 → 1 Dec 1995