Study of microstructure and gas sensing properties of tin oxide thin films prepared by metal organic chemical vapor deposition

Sang Woo Lee*, Donhang Liu, Ping P. Tsai, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Tin oxide (SnO2) thin films were deposited on polycrystalline alumina (Al2O3) substrates using metal organic chemical vapor deposition (MOCVD) technique at the growth temperature of 600 °C. X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were applied for the microstructure characterization of the films. The films were subjected to sensing tests under 1% H2 environment by monitoring changes in the electrical resistance of the films at elevated temperatures. There is a trend to exhibit sensor temperature characteristic in the deposited thin films which show a local maximum in the electrical resistance curve as a function of ambient temperature. The local maximum occurred at a relatively higher temperature than found in bulk sintered ceramics.

Original languageEnglish
Pages (from-to)237-242
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume415
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 26 Nov 19951 Dec 1995

Fingerprint Dive into the research topics of 'Study of microstructure and gas sensing properties of tin oxide thin films prepared by metal organic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this