Study of low-frequency noise in SOI tri-gate silicon nanowire MOSFETs

M. Koyama, M. Casse, R. Coquand, S. Barraud, G. Ghibaudo, H. Iwai, G. Reimbold

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We report an experimental study of low-frequency noise (LFN) in n-type tri-gate (TG) Si nanowire (NW) field-effect transistors (FET) with cross-section width down to 10 nm. Drain current noise spectral density has been measured in all ranges of transistor operation. The LFN behavior shows good agreement with carrier number fluctuations with correlated mobility fluctuations even in ultra-scaled TGNW. We did not observe large contribution due to surface orientation difference between the (100) top and (110) side-walls of TGNW. Moreover, the influence of drain voltage and extracted oxide trap density are roughly the same for reference wide devices and TGNW FETs.

Original languageEnglish
Title of host publication2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
DOIs
StatePublished - 2013
Event2013 22nd International Conference on Noise and Fluctuations, ICNF 2013 - Montpellier, France
Duration: 24 Jun 201328 Jun 2013

Publication series

Name2013 22nd International Conference on Noise and Fluctuations, ICNF 2013

Conference

Conference2013 22nd International Conference on Noise and Fluctuations, ICNF 2013
CountryFrance
CityMontpellier
Period24/06/1328/06/13

Keywords

  • carrier trap density
  • low-frequency noise
  • Si nanowire MOSFET
  • surface orientation
  • tri-gate

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