Study of interface trap charges in inas nanowire tunnel fet

Sankalp K. Singh, Ankur Gupta, Venkateshan Nagarajan, Deepak Anandan, Ramesh K. Kakkerla, Hung W. Yu, Edward Yi Chang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The effect of Interface traps is investigated on the Homojunction Indium-Arsenide (InAs) gate all around nanowire tunneling FET (HJ-GAA-TFET). Device Ion/Ioff ratio was chosen as key Figure-of-Merit (FoM) in this investigation. Interface traps impact the flat-band voltage of the device, causing degradation in the device performance. It is observed that as the trap density increases, Ioff degrades significantly by *3 orders in magnitude.

Original languageEnglish
Title of host publicationThe Physics of Semiconductor Devices - Proceedings of IWPSD 2017
EditorsR.K. Sharma, D.S. Rawal
PublisherSpringer Science and Business Media, LLC
Pages1165-1170
Number of pages6
ISBN (Print)9783319976037
DOIs
StatePublished - 1 Jan 2019
Event19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 - New Delhi, India
Duration: 11 Dec 201715 Dec 2017

Publication series

NameSpringer Proceedings in Physics
Volume215
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Conference

Conference19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017
CountryIndia
CityNew Delhi
Period11/12/1715/12/17

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