Study of interface state trap density on characteristics of MOS-HEMT

Ming Chun Tseng, Ming Hsien Hung, Dong Sing Wuu, Ray-Hua Horng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


In this study, the effects of chemical treatment on the properties of MOS capacitors and metal-oxidesemiconductor high electron mobility transistor (MOS-HEMT) were studied. The structure consist of Al2O3/u-GaN/AlN buffer/ Si substrate and Al2O3 (10 nm)/u-AlGaN (25 nm)/u-GaN (2μm)/AlN buffer/Si substrate for MOS capacitor and MOS-HEMT device, respectively. There are four chemical treatment recipes, which consist of organic solvents, oxygen plasma, BCl3 plasma, dilute acidic solvent, hydrofluoric acid and RCA-like clean process to remove the metal ions, organic contamination and native oxide. Four different chemical treatment recipes treated the surface of u-GaN before Al2O3 was grown on the treated surface to reduce the interface state trap densities (Dit). The Dit value was calculated from measurement of C-V curve with 1M Hz frequency. The formation of interface state trap of u-GaN surface is modified by different chemical solution of varied chemical treatment recipe, which further influence the breakdown voltage (Vbk), on-resistance (Ron), threshold voltage (Vth) and drain current (Id) of MOS-HEMT. The Vth of MOS-HEMT with organic solvents clean treatment is -11.00V. The MOS-HEMT after BCl3 plasma and organic solvents clean treatment shows the lowest Vth of -9.55V. The electronic characteristics of MOS HEMT device with four different chemical treatment recipes were investigated in this article.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
ISBN (Electronic)9781628414530
StatePublished - 1 Jan 2015
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco


  • capacitors
  • chemical treatment
  • high electron mobility transistor
  • interface state trap densities

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