Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs

Ching Yi Hsu, Yuping Zeng, Chen Yen Chang, Chen-Ming Hu, Edward Yi Chang

Research output: Contribution to journalArticle

4 Scopus citations


An electrostatic nonuniformity in the cantilever vertical tunneling FETs intrinsically exists in the InAs/GaSb junction to InAs cantilever transition region. The effects of the coupling ratio (CR) nonuniformity are investigated in this paper. The results show that the switching characteristics are degraded by the CR nonuniformity, especially in the case of large InAs/GaSb band offset. This paper also reveals that the nonuniformity in InAs/GaSb vertical tunneling FETs can be mitigated with the optimized band offset of heterojunction, scaling of oxide thickness, and acute angle etching profile.

Original languageEnglish
Article number7582366
Pages (from-to)4267-4272
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
StatePublished - 1 Nov 2016


  • Band offset
  • InAs/GaSb tunneling FETs (TFETs)
  • coupling ratio (CR)
  • nonuniformity
  • quantum confinement

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