Study of InGaN self-assembled quantum dots with interruption growth by metal organic chemical vapor deposition

H. H. Yao*, G. S. Huang, C. Y. Chen, W. D. Liang, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Self-assembled InGaN/GaN quantum dots (QDs) with different interruption time were grown by MOCVD system. The peak emission energy of PL spectra exhibits a blue shift as the interruption time increases.

Original languageEnglish
Title of host publicationInternational Quantum Electronics Conference 2005
Pages139-140
Number of pages2
DOIs
StatePublished - 1 Dec 2005

Publication series

NameIQEC, International Quantum Electronics Conference Proceedings
Volume2005

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