Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process

Yi Keng Fu*, Bo Chun Chen, Yen Hsiang Fang, Ren Hao Jiang, Yu Hsuan Lu, Rong Xuan, Kai-Feng Huang, Chia Feng Lin, Yan Kuin Su, Jenn-Fang Chen, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {1011} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.

Original languageEnglish
Article number5940992
Pages (from-to)1373-1375
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number19
DOIs
StatePublished - 15 Sep 2011

Keywords

  • Chemical wet-etching
  • GaN
  • light extraction
  • near-ultraviolet (NUV) light-emitting diode (LED)

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