The inductively coupled plasma (ICP) system was used to study the grass formation on gallium arsenide backside via etching with chlorine based chemistry. The effect of etching condition was on grass formation was analyzed by performing ICP source power, pressure and gas ratio. It was found that surface defects on gallium arsenide, induced during a backside thinning combined with weak physical ion bombardment in etch conditions, lead to the grass growth.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Nov 2000|
|Event||44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA|
Duration: 30 May 2000 → 2 Jun 2000