Study of grass formation in GaAs backside via etching using inductively coupled plasma system

P. S. Nam*, L. M. Ferreira, T. Y. Lee, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

The inductively coupled plasma (ICP) system was used to study the grass formation on gallium arsenide backside via etching with chlorine based chemistry. The effect of etching condition was on grass formation was analyzed by performing ICP source power, pressure and gas ratio. It was found that surface defects on gallium arsenide, induced during a backside thinning combined with weak physical ion bombardment in etch conditions, lead to the grass growth.

Original languageEnglish
Pages (from-to)2780-2784
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
StatePublished - 1 Nov 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: 30 May 20002 Jun 2000

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